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Hotline：400-788-7770
Sales Tel： 86 0757 28301898
Mob ：18923224605
Email ：gdm1@ctc-semi.com
Q Q ：3070971984
Fax ：0757-28317760
Head Office：No.19 HeAn Street,North Debao Road,Ronggui Town,Shunde District,Foshan City,Guangdong Province,China
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- 4A, 600V N-CHANNEL MOSFET
- Model：SVF4N60F
- SVF4N60D/F/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
SHOW
4A, 600V N-CHANNEL MOSFET
SVF4N60D/F/T/K/M/MJ
一、GENERAL DESCRIPTION
SVF4N60D/F/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
二、FEATURES
4A, 600V, RDS(on)(typ.)=2.0Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
三、Package Information
四、NOMENCLATURE
五、ORDERING INFORMATION
六、ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
